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近日発売 送料無料

設計技術シリーズ

車載機器におけるパワー半導体の設計と実装

著者: 岩室 憲幸氏(筑波大学)
価格: 3,600円(本体)+税
判型: A5
ページ数: 218 ページ
ISBN: 978-4-904774- 78-6
発売日: 2019/9/20

発売前の予約注文を承っております

【著者紹介】

【目次】

第1章 車載用パワーエレクトロニクス・パワーデバイス

  1. 1.1 はじめに
  2. 1.2 電圧型インバータと電流型インバータ
  3. 1.3 パワーデバイスの役割
  4. 1.4 パワーデバイスの種類
  5. 1.5 MOSFET・IGBTの台頭
  6. 1.6 最近のパワーデバイス技術動向
  7. 1.7 車載用パワーデバイス
  8. 1.8 車載用パワーデバイスの種類

第2章 シリコンMOSFET

  1. 2.1 はじめに
  2. 2.2 パワーMOSFET
    1. 2.2.1 基本セル構造
    2. 2.2.2 パワーMOSFET作成プロセス
    3. 2.2.3 MOS構造の簡単な基礎理論
    4. 2.2.4 ノーマリーオン特性とノーマリーオフ特性
    5. 2.2.5 電流―電圧特性
    6. 2.2.6 ソース・ドレイン間の耐圧特性
    7. 2.2.7 パワーMOSFETのオン抵抗
    8. 2.2.8 パワーMOSFETのスイッチング特性
    9. 2.2.9 トレンチゲートパワーMOSFET
    10. 2.2.10 最先端シリコンパワーMOSFET
    11. 2.2.11 MOSFET内蔵ダイオード
    12. 2.2.12 周辺耐圧構造

第3章 シリコンIGBT

  1. 3.1 はじめに
  2. 3.2 基本セル構造
  3. 3.3 IGBTの誕生
  4. 3.4 電流―電圧特性
  5. 3.5 コレクタ―エミッタ間の耐圧特性
  6. 3.6 IGBTのスイッチング特性
  7. 3.7 IGBTの破壊耐量(安全動作領域)
  8. 3.8 IGBTのセル構造
  9. 3.9 IGBTセル構造の進展
  10. 3.10 IGBT実装技術
  11. 3.11 最新のIGBT技術
  12. 3.12 今後の展望

第4章 シリコンダイオード

  1. 4.1 はじめに
  2. 4.2 ダイオードの電流―電圧特性、逆回復特性
  3. 4.3 ユニポーラ型ダイオード
    1. 4.3.1 ショットキーバリアダイオード(SBD)
  4. 4.4 バイポーラ型ダイオード
    1. 4.4.1 pinダイオード
    2. 4.4.2 SSDダイオードとMPSダイオード

第5章 SiCパワーデバイス

  1. 5.1 はじめに
  2. 5.2 結晶成長とウェハ加工プロセス
  3. 5.3 SiCユニポーラデバイスとSiCバイポーラデバイス
  4. 5.4 SiCダイオード
    1. 5.4.1 SiC-JBSダイオード
    2. 5.4.2 SiC-JBS作成プロセス
    3. 5.4.3 SiC-JBSダイオードの周辺耐圧構造
    4. 5.4.4 SiC-JBSダイオードの破壊耐量
    5. 5.4.5 シリコンIGBTとSiC-JBSダイオードのハイブリッドモジュール
    6. 5.4.6 SiC pinダイオードの順方向劣化
  5. 5.5 SiC-MOSFET
    1. 5.5.1 SiC-MOSFET作成プロセス
    2. 5.5.2 ソース・ドレイン間の耐圧設計
    3. 5.5.3 プレーナーMOSFETのセル設計
    4. 5.5.4 SiCトレンチMOSFET
    5. 5.5.5 SiCトレンチMOSFET作成プロセス
    6. 5.5.6 SiC-MOSFETの破壊耐量解析
  6. 5.6 最新のSiC-MOSFET技術
    1. 5.6.1 SiC superjunction MOSFET
    2. 5.6.2 新構造MOSFET
  7. 5.7 SiCデバイスの実装技術

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